Universal description of channel conductivity for nanotube and nanowire transistors
نویسندگان
چکیده
A theory of drift-diffusion transport in a low-dimensional field-effect transistor is developed. Two cases of a semiconductor nanowire and a single-wall nanotube are considered using self-consistent electrostatics to obtain a general expression for the transconductance. This quantum-wire channel device description is shown to differ from a classical device theory because of the specific nanowire charge density distribution. © 2003 American Institute of Physics. @DOI: 10.1063/1.1604462#
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